Monolayer ThSi 2 N 4 : An indirect-gap semiconductor with ultra-high carrier mobility
Cheng Lu,Chuyan Cui,Jingning Zuo,Hongxia Zhong,Shi He,Wei Dai,Xin Zhong
DOI: https://doi.org/10.1103/physrevb.108.205427
IF: 3.7
2023-11-29
Physical Review B
Abstract:The recently synthesized MoSi2N4 monolayer [Science 369, 670 (2020)0036-807510.1126/science.abb7023] exhibit outstanding environmental stability, moderate band gap, and excellent mechanical properties, which opens up a new avenue for the explorations of two-dimensional (2D) MA2Z4 materials. Inspired by this finding, we perform comprehensive structural predictions of MSi2N4 monolayers with lanthanide and actinide metals at the M site. Using the CALYPSO structural search method and first-principles calculations, we identify seven MSi2N4 monolayers with robust ambient stabilities, four of which are metals (M = Tm, Lu, Pa, Np) and three are semiconductors (M = Ce, Th, U). Of particular interest is the ThSi2N4 monolayer, which is an indirect-gap semiconductor with ultra-high electron mobility of 14384 cm2V−1s−1. Our results enrich the 2D MA2Z4 family and offer insights into the design and synthesis of novel multifunctional materials.
physics, condensed matter, applied,materials science, multidisciplinary