Low Lattice Thermal Conductivity of CsMgBi with Layered Structure

Yufeng Liang,Yinchang Zhao,Jun Ni,Zhenhong Dai
DOI: https://doi.org/10.1016/j.mtcomm.2024.110186
IF: 3.8
2024-01-01
Materials Today Communications
Abstract:Based on first-principles calculations, this paper systematically analyzes the thermal transport and thermoelectric properties of the layered compound CsMgBi, utilizing the Boltzmann transport equations. The layered structure of CsMgBi results in strong anisotropy, leading to significant differences in electrical conductivity and thermal conductivity between the a(b)-axis and the c-axis. CsMgBi exhibits an ultra-low lattice thermal conductivity along the c-axis due to strong anharmonicity, with a value of only 0.68 Wm-1K-1 at room temperature. We achieved excellent power factors (PF) of 1.40 Wm-1 K-2 for n-type doping and 1.63 Wm-1 K-2 for p-type doping at 600 K and 900 K, respectively. Our predictions indicate that at 900 K, the maximum ZT value for n-type CsMgBi is 1.24, while the maximum ZT value for p-type CsMgBi is 1.36. The findings of the research indicate that CsMgBi holds significant potential as an outstanding thermoelectric material.
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