Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Electronic properties and quasiparticle model of monolayer MoSi<sub>2</sub>N<sub>4</sub>

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Composition-dependent absorption of radiation in semiconducting MSi2Z4 Monolayers

Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Exploring electronic and valley properties of single-layer SMSiN 2 (M = Mo, W): a first-principles study on two-dimensional Janus materials

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Undulated 2D materials as a platform for large Rashba spin-splitting and persistent spin-helix states

Modulation of Spin Dynamics in 2D Transition‐Metal Dichalcogenide via Strain‐Driven Symmetry Breaking

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Valley Pseudospin in Monolayer MoSi2N4 and MoSi2As4

Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Reversible engineering the spin-orbit coupling of monolayer MoS2 via laser irradiation under controlled gas atmospheres

Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN4 Rashba systems

Robust Spin-Valley Polarization in Commensurate MoS2 /graphene Heterostructures