Abstract:Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into quantum devices. Here, we show that a new class of laterally-confined materials, monolayer MoS$_2$ QDs, can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor so that they exhibit the same valley polarization as in a continuous monolayer sheet. Semiconductor-compatible nanofabrication process allows for these low-dimensional materials to be integrated into complex systems, an important feature for advancing quantum information applications. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS$_2$ QDs using semiconductor-compatible processing suggest that monolayer semiconductor QDs have the potential to be multimodal building blocks of integrated quantum information and spintronics systems.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: **How to achieve and maintain valley polarization in two - dimensional transition - metal dichalcogenide (TMD) monolayer quantum dots, and retain their unique spin - valley coupling characteristics even under quantum confinement conditions**. ### Specific Problems and Background 1. **Multimodal Characteristics of Quantum Dots** - Traditional semiconductor quantum dots (QDs) can exhibit size - tunable electronic and optical characteristics through three - dimensional confinement, which are suitable for a variety of optoelectronic devices, such as displays, solar cells, biomedical imaging, and single - electron devices. - These materials can also provide additional degrees of freedom, such as spin and valley characteristics, which are crucial for quantum information processing and spintronics. 2. **The Influence of Quantum Confinement on Valley Polarization** - In other materials (such as graphene and silicon quantum dots), quantum confinement can lead to valley hybridization, thereby weakening the stability of valley polarization. This makes it difficult to apply valley polarization in quantum devices. - However, two - dimensional TMD materials have non - degenerate but different valleys due to their special crystal symmetry and strong spin - orbit coupling, and exhibit opposite Berry curvature in the band structure. Therefore, it is very important to study the valley polarization behavior of these materials under quantum confinement conditions. ### Core Contributions of the Paper - **Proposing a New Laterally Confined Material**: By using nanopatterning techniques to process monolayer TMD materials (such as MoS₂) into quantum dots, making them retain the same valley polarization characteristics as the continuous monolayer. - **Verifying the Stability of Valley Polarization**: The experimental results show that these monolayer TMD quantum dots inherit the valley - selective band structure of the continuous monolayer under weak confinement conditions and exhibit controllable optical characteristics depending on their lateral size. - **Providing Potential Application Prospects**: These quantum dots are expected to become multimodal building blocks for integrated quantum information systems and spintronics systems because they can explore the valley degrees of freedom of individual low - dimensional electrons. ### Conclusion Through precisely controlled nanofabrication processes, this paper successfully achieves the stable existence of valley polarization in monolayer TMD quantum dots, solving the problem that valley polarization in traditional quantum dot materials is easily affected by quantum confinement. This achievement provides new possibilities for future quantum information processing and spintronics applications.

Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots

Size-tunable Lateral Confinement in Monolayer Semiconductors

Valley-polarized exciton–polaritons in a monolayer semiconductor

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings

Simultaneous Perfect Polarization Of Spin And Valley Using Monolayer Mos2 Modulated By Light And Spin Zeeman Field

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Opto-valleytronic imaging of atomically thin semiconductors

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Room-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying

Valley polarization in stacked MoS2 induced by circularly polarized light

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Valleytronics in bulk MoS 2 with a topologic optical field

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet