Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Electrical Switching of the Off-Resonance Room-Temperature Valley Polarization in Monolayer MoS<sub>2</sub> by a Double-Resonance Chiral Microstructure

Tailoring MoS2 Valley-Polarized Photoluminescence with Super Chiral Near-Field.

Achiral dielectric metasurfaces for spectral and polarization control of valley specific light emission from monolayer MoS2

Enhancement of Room-Temperature Photoluminescence and Valley Polarization of Monolayer and Bilayer WS2 Via Chiral Plasmonic Coupling.

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Steering Valley-Polarized Emission of Monolayer MoS 2 Sandwiched in Plasmonic Antennas

Manipulation of Valley Pseudospin by Selective Spin Injection in Chiral Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures.

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Asymmetric Valley Polarization and Photoluminescence in MoS2/MoO3 Heterostructure.

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces

Spin and Valley Polarization in MoS2, MoSe2, and WSe2 Monolayers (conference Presentation)

Valley polarization in MoS 2 monolayers by optical pumping

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Valley Polarization Enhancement Induced by a Single Chiral Nanoparticle

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation