Abstract:The interplay between excitons and point defects in semiconductors plays a critical role in optical and optoelectronic properties, especially within a reduced dimensional system. Recently, it has been shown that the superacid treatment on a monolayer sulfur-based transition metal dichalcogenide (TMDC) provided efficient defect repairing/passivation, leading to an enhanced photoluminescence (PL) quantum yield and exciton radiative lifetime by more than two orders of magnitude. Meanwhile, the TMDC monolayer possesses valley-contrast properties and consequently valleytronics applications in which one key parameter, valley polarization, is in principle inversely proportional to the exciton lifetime, suggesting the degraded valley polarization after the superacid treatment. The behavior of the valley properties in the superacid-treated sulfur-based TMDC monolayer remains largely unexplored. Here, we perform detailed steady-state circularly polarized PL characterizations on superacid-treated MoS2 monolayers. We show the ultrahigh stability of the acid molecule's decoration in the high vacuum and low temperature environments. While one counterintuitive finding is the presence of defect-bound emissions at low temperature after the treatment, the temperature-dependent behavior of the valley polarization does not show any significant variation before and after the treatment. An exciton-decaying model involved with deep trapped states is utilized, accompanied by the theoretically re-built valley polarization expression, to comprehend experimental findings. Our results suggest that the superacid-treated sulfur-based TMDCs with superior PL performance and unaffected valley properties are an excellent candidate for applications of highly efficient valleytronic devices.

Anomalous valley polarization in monolayer MoSe2

Valley polarization in MoS 2 monolayers by optical pumping

Zeeman-Induced Valley-Sensitive Photocurrent in Monolayer MoS2

Valley polarization in MoS2 monolayers by optical pumping

Room temperature interlayer exciton valley polarization and valley Hall effect

Giant paramagnetism induced valley polarization of electrons in charge-tunable monolayer MoSe2

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Valley polarization of trions in monolayer MoSe$_2$ interfaced with bismuth iron garnet

Spin and Valley Polarization in MoS2, MoSe2, and WSe2 Monolayers (conference Presentation)

Asymmetric Valley Polarization and Photoluminescence in MoS2/MoO3 Heterostructure.

Valley-polarized exciton–polaritons in a monolayer semiconductor

Valley Polarization in Superacid-Treated Monolayer MoS 2

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Spontaneous Polarization Dynamics in V-doped Monolayer MoS2

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Valley-hybridized gate-tunable 1D exciton confinement in MoSe2

Polarization Characteristics of Valley and Spin Using Monolayer MoS2 Structure Modulated by Strain

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate