Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

Spontaneous Polarization Dynamics in V-doped Monolayer MoS2

Valley polarization in MoS 2 monolayers by optical pumping

Simultaneous Perfect Polarization Of Spin And Valley Using Monolayer Mos2 Modulated By Light And Spin Zeeman Field

Anomalous valley polarization in monolayer MoSe2

Polarization Characteristics of Valley and Spin Using Monolayer MoS2 Structure Modulated by Strain

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Valley polarization in MoS2 monolayers by optical pumping

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Tuning the valley depolarization dynamics in selenium and vanadium alloyed monolayer

Enhanced Spin Polarization and Valley Polarization in Monolayer MoS2 Junctions.

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Dynamics of Valley-Polarized Exciton-Polaritons in Monolayer MoS2

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Valley-polarized exciton–polaritons in a monolayer semiconductor

Spin-Valley Depolarization in Van Der Waals Heterostructures

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi 2 N 4 /MnPS 3 Heterostructure

Realization of valley-spin polarized current via parametric pump in monolayer $\rm MoS_2$

Abstract Submitted for the MAR14 Meeting of The American Physical Society Valley Carrier Dynamics in Monolayer Molybdenum Disulphide from Helicity Resolved Ultrafast Pump-probe Spectroscopy

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Valley polarization in stacked MoS2 induced by circularly polarized light