Abstract:Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel material in field-effect transistors. In this work we determine the electronic structure of MoS2 with the highly accurate screened hybrid functional within the density functional theory (DFT) including the spin-orbit coupling. Using the DFT electronic structures as target, we have developed a single generic tight-binding (TB) model that accurately produces the electronic structures for three different forms of MoS2 - bulk, bilayer and monolayer. Our TB model is based on the Slater-Koster method with non-orthogonal sp3d5 orbitals, nearest-neighbor interactions and spin-orbit coupling. The TB model is useful for atomistic modeling of quantum transport in MoS2 based electronic devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a general tight - binding (TB) model to accurately describe the electronic structures of molybdenum disulfide (MoS₂) in different structural forms (monolayer, bilayer, and bulk). Specifically: 1. **Background and Motivation**: - MoS₂ is a layered semiconductor material and has attracted much attention in recent years due to its potential applications in electronic devices. In particular, two - dimensional MoS₂ has significant advantages as a channel material for field - effect transistors (FETs). - Theoretically, in order to better understand and design nano - electronic devices based on MoS₂, a reliable, atomic - level electronic structure model is required. However, most of the existing theoretical studies are based on simplified models, such as the effective mass model, which cannot provide sufficient accuracy. 2. **Core of the Problem**: - Since different numbers of layers of MoS₂ can lead to significant changes in its electronic properties (for example, from an indirect bandgap to a direct bandgap), a unified model that can be applied to monolayer, bilayer, and bulk MoS₂ simultaneously is needed. - This model must be able to accurately capture the key features of the electronic structure, including the bandgap, effective mass, and spin - orbit coupling effects. 3. **Solution**: - The authors of the paper used high - precision screened hybrid functional density functional theory (DFT - HSE) calculations as the target electronic structure and developed a tight - binding model of non - orthogonal sp³d⁵ orbitals based on the Slater - Koster method. - By optimizing 96 parameters, this model can accurately reproduce the electronic structures obtained by DFT calculations in MoS₂ with different numbers of layers. 4. **Verification and Application**: - The accuracy of the model was verified by comparing the bandgap and effective mass between the tight - binding model and the DFT - HSE calculation results. - This model is not only applicable to MoS₂, but can also be extended to other similar transition metal dichalcogenides (TMDCs), such as WS₂, WSe₂, and MoSe₂, for applications such as quantum transport simulations. In summary, the main purpose of this paper is to fill the gaps in existing theoretical models in describing the electronic structure of MoS₂ and provide a general and accurate tight - binding model to support the design and research of nano - electronic devices based on MoS₂.

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