Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

SPICE Modeling and Simulation of High-Performance Wafer-Scale MoS2 Transistors

SPICE Modeling and Verification of Wafer-Scale MoS2Transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS2 Materials with Physical and SPICE Model

Simulation of MoS2 Stacked Nanosheet Field Effect Transistor

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

SPICE Modeling of Three Novel SiC MOSFETs with Integrated Junction-Barrier-Schottky Diode

A Full-region Model for Ultra-Scaled MoS<inf>2</inf> MOSFET Covering Direct Source-Drain Tunneling

S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide

A generic tight-binding model for monolayer, bilayer and bulk MoS2

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

Enhancing simulation feasibility for multi-layer 2D MoS 2 RRAM devices: reliability performance learnings from passive network model

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors