Abstract:With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of L, and C-gd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via State-flow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

A Non-Segmented PSpice Model of SiC MOSFETs

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Establishment and Simulation Analysis of SiC MOSFET SPICE Model

Modeling of Sic Mosfet in Matlab/Simulink

An Accurate and Effective Spice Model of 6.5kv SiC MOSFET with Parasitic Parameters Analysis in Medium-Voltage Power Module

A Non-Segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters

SPICE Modeling of Three Novel SiC MOSFETs with Integrated Junction-Barrier-Schottky Diode

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

A Temperature-Dependent SiC MOSFET Modeling Method Based on MATLAB/Simulink

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Novel Methodology for Fast Model Parameter Extracting Using $q_{\mathrm{g}}$ Waveforms to Accurately Capture Switching Characteristics of SiC MOSFET under Various Load Conditions

An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

Analytical Modeling Of Switching Characteristics Of The Sic Mosfet Based On Finite State Machine

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module