Abstract:This article presents a datasheet-driven empirical model of silicon carbide (SiC) MOSFET, in which both the static ${I}$ – ${V}$ and dynamic ${C}$ – ${V}$ characteristics are accurately captured by using nonsegmented empirical equations. Compared with the existing models, this model features on describing the first quadrant conduction ${I}$ – ${V}$ characteristics through nonsegmented empirical equations while considering the intrinsic physical mechanisms, which is beneficial for improving the convergence capability. Moreover, the nonlinear Miller capacitance ${C}_{gd}$ is accurately captured considering the shielding effect caused by the adjacent p-wells. Apart from the abovementioned added features, a parameter extraction procedure is also proposed, in which all the parameter values could be directly extracted from the data provided in the commercial datasheet. The accuracy of the proposed model is verified through the comparisons between the modeling results and experimental data from the datasheet. Furthermore, the convergence capability of the proposed model is verified by simulating a seven-level cascaded H-bridge (CHB) inverter, in which 12 devices are included. The experimental double pulse test is finally carried out to verify the feasibility of the proposed model in simulating the dynamic transients.

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

A Non-Segmented PSpice Model of SiC MOSFETs

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Modeling of Sic Mosfet in Matlab/Simulink

A Non-Segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters

SPICE Modeling of Three Novel SiC MOSFETs with Integrated Junction-Barrier-Schottky Diode

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT

Piecewise Fitting Based Characteristics Analysis and Modeling for Converters with of SiC MOSFET

Analytical PSpice model for SiC MOSFET based high power modules

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Accurate Small-Signal Model and Its Parameter Extraction in Rf Silicon Mosfets

Mechanism Segmentation Transient Model of SiC MOSFETs for Multi-rate Electro-thermal Simulation