Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

A Full-region Model for Ultra-Scaled MoS<inf>2</inf> MOSFET Covering Direct Source-Drain Tunneling

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Unified MOSFET short channel factor using variational method

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

SPICE Modeling and Simulation of High-Performance Wafer-Scale MoS2 Transistors

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

A Tunneling Field Effect Transistor Model Combining Interband Tunneling with Channel Transport