Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

Simulation of MoS2 Stacked Nanosheet Field Effect Transistor

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

SPICE Modeling and Simulation of High-Performance Wafer-Scale MoS2 Transistors

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Steep-slope Transistors Enabled with 2D Quantum Coupling Stacks

Quantum-mechanical effect in atomically thin MoS2 FET

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Comparative simulation study on MoS2 FET and CMOS transistor

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Comparative simulation study on MoS2 FET and FinFET

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS<sub>2</sub> Nanosheets GAA-FET with I<sub>on</sub>>700 A/m and MoS<sub>2</sub>/WSe<sub>2</sub> CFET

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Improving Electron Mobility in MoS2 Field-Effect Transistors by Optimizing the Interface Contact and Enhancing the Channel Conductance Through Local Structural Phase Transition

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance