Abstract:This study investigates double‐gate chemical vapor deposition (CVD)‐grown monolayer molybdenum disulfide (1L‐MoS2) field‐effect‐transistors (FETs) and elucidates the mechanisms for improvements compared to single top‐gated devices. It also reports on the impact of equivalent oxide thickness (EOT) scaling on subthreshold swing (SS) and gate hysteresis towards EOT ∼1 nm as dictated by semiconductor technology roadmaps for future beyond‐Si CMOS nodes. 2D layered semiconductors have attracted considerable attention for beyond‐Si complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared into ultrathin channel materials toward ultrascaled device architectures, including double‐gate field‐effect‐transistors (DGFETs). This work presents an experimental analysis of DGFETs constructed from chemical vapor deposition (CVD)‐grown monolayer (1L) molybdenum disulfide (MoS2) with atomic layer deposition (ALD) of hafnium oxide (HfO2) high‐k gate dielectrics (top and bottom). This extends beyond previous studies of DGFETs based mostly on exfoliated (few‐nm thick) MoS2 flakes, and advances toward large‐area wafer‐scale processing. Here, significant improvements in performance are obtained with DGFETs (i.e., improvements in ON/OFF ratio, ON‐state current, sub‐threshold swing, etc.) compared to single top‐gate FETs. In addition to multi‐gate device architectures (e.g., DGFETs), the scaling of the equivalent oxide thickness (EOT) is crucial toward improved electrostatics required for next‐generation transistors. However, the impact of EOT scaling on the characteristics of CVD‐grown MoS2 DGFETs remains largely unexplored. Thus, this work studies the impact of EOT scaling on subthreshold swing (SS) and gate hysteresis using current–voltage (I–V) measurements with varying sweep rates. The experimental analysis and results elucidate the basic mechanisms responsible for improvements in CVD‐grown 1L‐MoS2 DGFETs compared to standard top‐gate FETs.

Comparative simulation study on MoS2 FET and CMOS transistor

Comparative simulation study on MoS2 FET and FinFET

Quantum-mechanical effect in atomically thin MoS2 FET

Impact of the Channel Length on Molybdenum Disulfide Field Effect Transistors with Hafnia-Based High-K Dielectric Gate

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Channel Length Scaling of MoS2 MOSFETs

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Simulation study of short channel effects in junctionless SOI MOSFETS

Distinct contact scaling effects in MoS2 Transistors revealed with asymmetrical contact measurements

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

Simulation of MoS2 Stacked Nanosheet Field Effect Transistor

Simulation Analysis of Electrical Characteristics of Strained Sige Channel-On-Insulator P-Mosfet