Abstract:Bilayer (BL) transition metal dichalcogenides (TMDs) are important materials in valleytronics and twistronics. Here we study terahertz (THz) magneto-optical (MO) properties of n-type 2 H -stacking BL molybdenum sulfide (MoS 2 ) on sapphire substrate grown by chemical vapor deposition. The AFM, Raman spectroscopy and photoluminescence are used for characterization of the samples. Applying THz time-domain spectroscopy (TDS), in combination with polarization test and the presence of magnetic field in Faraday geometry, THz MO transmissions through the sample are measured from 0 to 8 T at 80 K. The complex right- and left-handed circular MO conductivities for 2 H -stacking BL MoS 2 are obtained. Through fitting the experimental results with theoretical formula of MO conductivities for an electron gas, generalized by us previously through the inclusion of photon-induced electronic backscattering effect, we are able to determine magneto-optically the key electronic parameters of BL MoS 2 , such as the electron density n e , the electronic relaxation time τ , the electronic localization factor c and, particularly, the effective electron mass m* around Q -point in between the K - and Γ-point in the electronic band structure. The dependence of these parameters upon magnetic field is examined and analyzed. This is a pioneering experimental work to measure m* around the Q -point in 2 H -stacking BL MoS 2 and the experimental value is very close to that obtained theoretically. We find that n e / τ / ∣ c ∣ / m* in 2 H -stacking BL MoS 2 decreases/increases/decreases/increases with increasing magnetic field. The results obtained from this study can be benefit to us in gaining an in-depth understanding of the electronic and optoelectronic properties of BL TMD systems.

High-energy Electronic Excitations in a Bulk Mo S 2 Single Crystal

Low-energy collective excitations in a charge–density wave conductor K0.3MoO3

Ultrafast Collective Dynamics In The Charge-Density-Wave Conductor K0.3moo3

Exciton band structure of molybdenum disulfide: from monolayer to bulk

Phonon dispersion of MoS$_2$

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS<sub>2</sub>

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals

Large Exciton Binding Energy in the Bulk van der Waals Magnet CrSBr

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Indirect exciton-phonon dynamics in MoS2 revealed by ultrafast electron diffraction

Probing angle-resolved reflection signatures of intralayer and interlayer excitons in monolayer and bilayer MoS2

Exciton-activated effective phonon magnetic moment in monolayer MoS2

Plasmon-Enhanced Interface Charge Transfer Exciton of 2D In-Plane Lateral and van Der Waals MoS$_2$/WS$_2$ Heterostructures

Magnetic polaronic exciton in A-type 2D van der Waals bulk material CrSBr

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures

Intrinsic localized excitons in MoSe_2/CrSBr heterostructures

Ultrafast Internal Exciton Dissociation Through Edge States in MoS2 Nanosheets with Diffusion Blocking

Layer‐Dependent Exciton Modulation Characteristics of 2D MoS 2 Driven by Acoustic Waves

Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry