Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures

Xinyue Huang,Zhigang Song,Yuchen Gao,Pingfan Gu,Kenji Watanabe,Takashi Taniguchi,Shiqi Yang,Zuxin Chen,Yu Ye

2024-05-25

Abstract:We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in shaping excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to reveal the optical properties and their origin of the intrinsic localized excitons in the MoSe₂/CrSBr heterostructure. Specifically, through photoluminescence (PL) spectroscopy experiments and theoretical calculations, the researchers explored the following key issues:

1. **Discovery of the new emission feature X*: **
Researchers observed a new emission peak X* in the MoSe₂/CrSBr heterostructure, located at 1.635 eV, which is redshifted by about 13 meV compared to the neutral exciton (X₀) in monolayer MoSe₂ and 18 meV higher than the charged trion (T). What is the physical origin of this new emission feature?

2. **Analysis of temperature and power dependence: **
Through temperature - and power - dependent PL measurements, the researchers verified that the X* exciton is localized by the intrinsic defect potential well in the CrSBr layer. They found that the intensity of X* dominates the PL spectrum at low temperatures and gradually transitions to free - exciton emission as the temperature rises.

3. **Valley - polarization behavior: **
In the presence of a magnetic field, the valley - polarization of X* and the trion show opposite behaviors, which is closely related to the magnetic order of CrSBr. This phenomenon indicates that the spin - dependent charge - transfer mechanism between MoSe₂ and CrSBr has a significant impact on valley - polarization.

4. **Effect of in - plane anisotropy: **
The strong in - plane anisotropy of CrSBr results in a unique polarization - dependent response in MoSe₂ emission. In particular, under excitation light conditions in different polarization directions, the emissions of X* and CrSBr excitons show obvious anisotropy.

### Formula presentation

To better understand these phenomena, the researchers used some important formulas for explanation. For example, in the temperature - dependent PL intensity fitting, the modified Arrhenius formula was used to describe the intensity change of the X* peak:

\[ I(T)=\frac{I(0)}{1 + A e^{-E_{a1}/k_B T}+B e^{-E_{a2}/k_B T}} \]

where:
- \( I(T) \) is the PL intensity at temperature \( T \),
- \( I(0) \) is the PL intensity at \( T = 0 \) K,
- \( A \) and \( B \) are fitting parameters, describing the ratio of non - radiative decay rate to radiative decay rate,
- \( k_B \) is the Boltzmann constant,
- \( E_{a1} \) is the activation energy for enhanced radiative recombination,
- \( E_{a2} \) is the activation energy for the thermal quenching process at high temperatures.

In addition, the degree of circular polarization (DOCP) is defined as:

\[ \text{DOCP}=\frac{I_{\sigma^+}-I_{\sigma^-}}{I_{\sigma^+}+I_{\sigma^-}} \]

where \( I_{\sigma^+} \) and \( I_{\sigma^-} \) are the PL intensities under right - and left - circularly polarized light, respectively.

### Conclusion

In general, this study reveals new properties of the localized excitons caused by intrinsic defects in the MoSe₂/CrSBr heterostructure and deeply explores the interactions between these excitons and the magnetic order of CrSBr. These findings not only deepen the understanding of exciton physics in two - dimensional material heterostructures but also provide an important reference for the development of spintronics and valleytronics devices based on these materials.