Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr

C. Serati de Brito,P. E. Faria Junior,T. S. Ghiasi,J. Ingla-Aynés,C. R. Rabahi,C. Cavalini,F. Dirnberger,S. Mañas-Valero,K. Watanabe,T. Taniguchi,K. Zollner,J. Fabian,C. Schüller,H. S. J. van der Zant,Y. Galvão Gobato
2023-09-07
Abstract:Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe$_2$, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley $g$-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first principles calculations suggest that MoSe$_2$/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?