Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Optically Controlled Valley Filter and Transistor Based on Transition-Metal Dichalcogenide Planar Heterojunctions

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Generation and Transport of Valley-Polarized Current in Transition-Metal Dichalcogenides

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Giant and tunable valley degeneracy splitting in MoTe2

Photo-and exchange-field controlled spin and valley polarized transport in a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr

Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}_{2}-\text{MoSe}_{2}}$ interface

Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2-MoSe2 Interface