Abstract:Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization via manipulating the electron population enables its application in valley-based memory or quantum technologies. This study uncovered the uncompensated spins of the antiferromagnetic nickel oxide (NiO) serving as the ferromagnetic (FM) order to induce valley spin-polarization in molybdenum disulfide (MoS2) monolayers via the magnetic proximity effect (MPE). Spin-resolved photoluminescence spectroscopy (SR-PL) was employed to observe MoS2, where the spin-polarized trions appear to be responsible for the MPE, leading to a valley magnetism. Results indicate that local FM order from the uncompensated surface of NiO could successfully induce significant valley spin-polarization in MoS2 with the depolarization temperature approximately at 100 K, which is relatively high compared to the related literature. This study reveals new perspectives in that the precise control over the surface orientation of AFMs serves as a crystallographic switch to activate the MPE and the magnetic sustainability of the trion state is responsible for the observed valley spin-polarization with the increasing temperature, which promotes the potential of AFM materials in the field of exchange-coupled Van der Waals heterostructures.

Photo-and exchange-field controlled spin and valley polarized transport in a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides

Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Interplay of valley polarization and dynamic nuclear polarization in 2D transition metal dichalcogenides

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2-MoSe2 Interface

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Magnetoelectric tuning of spin, valley, and layer-resolved anomalous Nernst effect in transition-metal dichalcogenides bilayers

Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}_{2}-\text{MoSe}_{2}}$ interface

Spin- and valley-dependent transports through ferromagnetic 8-pmmn borophene monolayer

Optically Controlled Valley Filter and Transistor Based on Transition-Metal Dichalcogenide Planar Heterojunctions

Gate-controlled spin-valley-layer locking in bilayer transition-metal dichalcogenides

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Valley-spin polarized Landau levels in a monolayer semiconductor

Tunable Orbital Thermoelectric Transport with Spin-Valley Coupling in Ferromagnetic Transition Metal Dichalcogenides

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Giant Valley Splitting And Valley Polarized Plasmonics In Group V Transition-Metal Dichalcogenide Monolayers