Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}_{2}-\text{MoSe}_{2}}$ interface

Abhijeet Kumar,Denis Yagodkin,Nele Stetzuhn,Sviatoslav Kovalchuk,Alexey Melnikov,Peter Elliott,Sangeeta Sharma,Cornelius Gahl,Kirill I. Bolotin

DOI: https://doi.org/10.1021/acs.nanolett.1c01538

2021-07-10

Abstract:The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, $\sim 30\,{\text{ns}}^{-1}$ and $< 1\,{\text{ns}}^{-1}$, respectively and show that this difference relates to the disparity in the spin-orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of free carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on two aspects:

1. **Transport and protection of spin/valley polarization**: Researchers use the MoS₂ - MoSe₂ heterostructure to explore the transport of spin/valley - polarized carriers between interfaces under photo - excitation and verify the spin - preservation of these carriers in different tunneling directions. This is achieved by applying time - resolved Kerr rotation and reflectivity spectroscopy techniques. It is found that photo - excited carriers can maintain their spin states when passing through the interface.

2. **Differences in spin/valley depolarization rates between electrons and holes and their causes**: In the paper, the significantly different spin/valley depolarization rates of electrons and holes are measured, which are approximately 30 ns⁻¹ and < 1 ns⁻¹ respectively, and it is shown that this difference is related to the different spin - orbit splittings between the conduction band and the valence band in transition - metal dichalcogenides (TMDs). Specifically, due to the significant difference in the spin - orbit splitting intensity of the conduction band and the valence band in TMDs materials, the spin/valley depolarization rate of electrons is much higher than that of holes. This finding is of great significance for understanding the spin/valley dynamics in TMD heterostructures and is helpful for future applications in generating spin currents in spin/valley electronics devices.

In addition, the paper also explores the spin/valley dynamics of free carriers without being affected by complex exciton processes, and the robustness of the spin/valley degrees of freedom of these free carriers as information carriers in TMD heterostructures. Through these studies, the authors hope to provide new insights and technical bases for the application of TMD heterostructures in the fields of spintronics and valleytronics.