Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

M.M. Glazov,E.L. Ivchenko,G. Wang,T. Amand,X. Marie,B. Urbaszek,B.L. Liu
DOI: https://doi.org/10.1002/pssb.201552211
2015-09-16
Abstract:Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows studying the inter-valley dynamics of charge carriers and Coulomb complexes by means of optical spectroscopy. Here we present a concise review of the neutral exciton fine structure and its spin and valley dynamics in monolayers of transition metal dichalcogenides. It is demonstrated that the long-range exchange interaction between an electron and a hole in the exciton is an efficient mechanism for rapid mixing between bright excitons made of electron-hole pairs in different valleys. We discuss the physical origin of the long-range exchange interaction and outline its derivation in both the electrodynamical and $\mathbf k \cdot \mathbf p$ approaches. We further present a model of bright exciton spin dynamics driven by an interplay between the long-range exchange interaction and scattering. Finally, we discuss the application of the model to describe recent experimental data obtained by time-resolved photoluminescence and Kerr rotation techniques.
Mesoscale and Nanoscale Physics,Materials Science,Other Condensed Matter
What problem does this paper attempt to address?
This paper aims to explore the spin and valley dynamics of excitons in monolayer materials of transition metal dichalcogenides (TMDs). Specifically, the paper focuses on the fine structure of neutral excitons in these materials and their spin and valley dynamics, especially the influence of long - range exchange interactions on the mixing between exciton spins and valleys. By combining theoretical analysis and experimental data, the paper explains how charge carriers in monolayer TMDs materials rapidly transfer between different valleys in momentum space under circularly polarized light excitation, and discusses the physical mechanisms behind this dynamic process. ### Main problems in the paper 1. **Fine structure of neutral excitons**: The paper describes in detail the fine structure of neutral excitons in monolayer TMDs materials, especially the spin - valley locking effect at the K± valley points. 2. **Long - range exchange interactions**: It explores how long - range exchange interactions between electrons and holes lead to rapid mixing between bright excitons (composed of electron - hole pairs in different valleys). 3. **Spin dynamics**: It studies the spin dynamics of bright excitons, especially how the interaction between long - range exchange interactions and scattering drives this process. 4. **Experimental verification**: It discusses how to use time - resolved photoluminescence and Kerr rotation techniques to verify model predictions and explains the experimentally observed phenomena. ### Key formulas - **Effective Hamiltonian**: \[ H_X(K)=\begin{pmatrix} 0&\alpha(K_x - iK_y)^2\\ \alpha(K_x + iK_y)^2&0 \end{pmatrix}=\frac{\hbar}{2}(\Omega_K\cdot\sigma) \] where \(\alpha\) is the coupling parameter, \(\sigma\) is the Pauli matrix vector, and \(\Omega_K\) is the effective pseudo - spin precession frequency. - **Effective pseudo - spin precession frequency**: \[ \hbar\Omega_x = 2\alpha K^2\cos2\theta,\quad\hbar\Omega_y = 2\alpha K^2\sin2\theta \] where \(\theta\) is the angle between the wave vector \(K\) and the in - plane axis \(x\). ### Conclusion By combining theoretical models and experimental data, the paper reveals the complex mechanisms of exciton spin and valley dynamics in monolayer TMDs materials, especially the crucial role of long - range exchange interactions. These findings are of great significance for understanding and developing new optoelectronic devices based on TMDs.