Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2

Luyi Yang,Nikolai A. Sinitsyn,Weibing Chen,Jiangtan Yuan,Jing Zhang,Jun Lou,Scott A. Crooker

DOI: https://doi.org/10.1038/nphys3419

2015-06-03

Abstract:The recently-discovered monolayer transition metal dichalcogenides (TMDCs) provide a fertile playground to explore new coupled spin-valley physics. Although robust spin and valley degrees of freedom are inferred from polarized photoluminescence (PL) experiments, PL timescales are necessarily constrained by short-lived (3-100ps) electron-hole recombination. Direct probes of spin/valley polarization dynamics of resident carriers in electron (or hole) doped TMDCs, which may persist long after recombination ceases, are at an early stage. Here we directly measure the coupled spin-valley dynamics in electron-doped MoS_2 and WS_2 monolayers using optical Kerr spectroscopy, and unambiguously reveal very long electron spin lifetimes exceeding 3ns at 5K (2-3 orders of magnitude longer than typical exciton recombination times). In contrast with conventional III-V or II-VI semiconductors, spin relaxation accelerates rapidly in small transverse magnetic fields. Supported by a model of coupled spin-valley dynamics, these results indicate a novel mechanism of itinerant electron spin dephasing in the rapidly-fluctuating internal spin-orbit field in TMDCs, driven by fast intervalley scattering. Additionally, a long-lived spin coherence is observed at lower energies, commensurate with localized states. These studies provide crucial insight into the physics underpinning spin and valley dynamics of resident electrons in atomically-thin TMDCs.

Materials Science,Mesoscale and Nanoscale Physics