Abstract:Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circular and linear polarization, respectively. However, the generated excitons have short lifetimes (ps) and are also subject to the electron-hole exchange interaction leading to fast relaxation of the valley pseudospin and coherence. Here we show that control of these processes can be gained by embedding a monolayer of WSe$_2$ in an optical microcavity, where part-light-part-matter exciton-polaritons are formed in the strong light-matter coupling regime. We demonstrate the optical initialization of the valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than that of the excitons. We further control the evolution of the polariton valley coherence using a Faraday magnetic field to rotate the valley pseudospin by an angle defined by the exciton-cavity-mode detuning, which exceeds the rotation angle in the bare exciton. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures.

Ultrafast dynamics of spin relaxation in monolayer WSe2 and WSe2/graphene heterojunction

Ultrafast Electron Transfer with Long-Lived Charge Separation and Spin Polarization in WSe2/C60 Heterojunction

Long-Lived Nanosecond Spin Relaxation And Spin Coherence Of Electrons In Monolayer Mos2 And Ws2

Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers

Ultrafast Electronic Dynamics in Anisotropic Indirect Interlayer Excitonic States of Monolayer WSe2/ReS2 Heterojunctions.

Long valley lifetime of free carriers in monolayer WSe2

Spin-Valley Depolarization in Van Der Waals Heterostructures

Ultrafast Electronic Dynamics in Anisotropic Indirect Interlayer Excitonic States of Monolayer WSe 2 /ReS 2 Heterojunctions

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2

Long valley lifetime of dark excitons in single-layer WSe2

Valley phonons and exciton complexes in a monolayer semiconductor

Electric Field Tunable Interlayer Relaxation Process and Interlayer Coupling in WSe2/Graphene Heterostructures

Unveiling Ultrafast Spin-Valley Dynamics and Phonon-Mediated Charge Transfer in MoSe$_{2}$/WSe$_{2}$ Heterostructures

Symmetry governed valley-pseudospin textures of the full-zone excitonic bands of transition-metal dichalcogenide monolayers

Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

Unveiling Ultrafast Spin‐Valley Dynamics and Phonon‐Mediated Charge Transfer in MoSe2/WSe2 Heterostructures

Ultrafast Generation of Pseudo-magnetic Field for Valley Excitons in WSe2 Monolayers

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

Valley coherent exciton-polaritons in a monolayer semiconductor

Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers