Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Long valley lifetime of free carriers in monolayer WSe2

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Valley-spin polarized Landau levels in a monolayer semiconductor

Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe$_2$

Anomalous temperature-dependent spin-valley polarization in monolayer WS2

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Anomalous temperature-dependent spin-valley polarization in monolayer WS$_{2}$

Gate-controlled spin-valley-layer locking in bilayer transition-metal dichalcogenides

Intrinsic spin-valley locking for conducting electrons in metal-semiconductor-metal lateral heterostructures of -transition-metal dichalcogenides

Direct observation of intravalley spin relaxation in single-layer WS$_2$

Electrical Switching of Valley Polarization in Monolayer Semiconductors

Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Long-Lived Nanosecond Spin Relaxation And Spin Coherence Of Electrons In Monolayer Mos2 And Ws2

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe$_2$

Ultrafast dynamics of spin relaxation in monolayer WSe2 and WSe2/graphene heterojunction

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2