Abstract:Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circular and linear polarization, respectively. However, the generated excitons have short lifetimes (ps) and are also subject to the electron-hole exchange interaction leading to fast relaxation of the valley pseudospin and coherence. Here we show that control of these processes can be gained by embedding a monolayer of WSe$_2$ in an optical microcavity, where part-light-part-matter exciton-polaritons are formed in the strong light-matter coupling regime. We demonstrate the optical initialization of the valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than that of the excitons. We further control the evolution of the polariton valley coherence using a Faraday magnetic field to rotate the valley pseudospin by an angle defined by the exciton-cavity-mode detuning, which exceeds the rotation angle in the bare exciton. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures.

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe$_2$

Valley coherent exciton-polaritons in a monolayer semiconductor

Long-Lived Valley Polarization of Intra-Valley Trions in Monolayer WSe2

Long valley lifetime of free carriers in monolayer WSe2

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Momentum-Resolved Exciton Coupling and Valley Polarization Dynamics in Monolayer WS$_2$

Valley Polarization-Electric Dipole Interference and Nonlinear Chiral Selection Rules in Monolayer WSe$_2$

Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe$_2$

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Control of the valley polarization of monolayer WSe 2 by dexter-like coupling

Superior valley polarization and coherence of 2s excitons in monolayer WSe2

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide

Long valley lifetime of dark excitons in single-layer WSe2

Valley-polarized exciton–polaritons in a monolayer semiconductor

Valley-polarized Local Excitons in WSe2/WS2 Vertical Heterostructures.

Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS 2

Direct Imaging of Valley-Polarized Excitons in 2D Semiconductors

Anomalous temperature-dependent spin-valley polarization in monolayer WS2

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

Anomalous temperature-dependent spin-valley polarization in monolayer WS$_{2}$

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure