Abstract:Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

Valley-polarized exciton–polaritons in a monolayer semiconductor

Valley coherent exciton-polaritons in a monolayer semiconductor

Spin-Valley Depolarization in Van Der Waals Heterostructures

Anomalous valley polarization in monolayer MoSe2

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Unveiling Ultrafast Spin‐Valley Dynamics and Phonon‐Mediated Charge Transfer in MoSe2/WSe2 Heterostructures

Room temperature interlayer exciton valley polarization and valley Hall effect

Valley-dependent exciton fine structure and Autler–Townes doublets from Berry phases in monolayer MoSe2

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Valley-hybridized gate-tunable 1D exciton confinement in MoSe2

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

Valley phonons and exciton complexes in a monolayer semiconductor

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe$_2$

Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe2/WSe2 Heterobilayers: From Energy Bands to Dipolar Excitons

Valley-magnetophonon resonance for interlayer excitons

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Unveiling Ultrafast Spin-Valley Dynamics and Phonon-Mediated Charge Transfer in MoSe$_{2}$/WSe$_{2}$ Heterostructures

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

Tuning the valley depolarization dynamics in selenium and vanadium alloyed monolayer

Valley-Hybridized Gate-Tunable 1D Exciton Confinement in MoSe 2