All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Xintong Li,Zhida Liu,Yihan Liu,Suyogya Karki,Xiaoqin Li,Deji Akinwande,Jean Anne C. Incorvia

DOI: https://doi.org/10.48550/arXiv.2202.11774

2022-02-24

Abstract:Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the spatial distribution and temperature dependence of the Spin and Valley Hall Effect (SVHE) in single - layer tungsten diselenide (WSe₂) transistors. Specifically, the researchers hope to experimentally verify the following aspects:

1. **Performance of SVHE at different temperatures**: In particular, to explore whether SVHE can persist at relatively high temperatures (such as 160 K) and can be regulated by electrical means.
2. **Possibility of electrical modulation**: Regulate SVHE through gate voltage and drain voltage to achieve electrical control of spin and valley polarization.
3. **Estimation of spin/valley lifetime**: Use Kerr rotation (KR) measurement data, combined with reflection spectrum analysis, to estimate the minimum lifetimes of spin and valley.
4. **Calculation of spin/valley polarization density**: Evaluate the spin and valley polarization densities at the edge and explore their relationships with temperature and carrier concentration.

### Specific problems and solutions

- **Temperature dependence**: By performing spatial Kerr rotation measurements at different temperatures, the researchers found that SVHE can persist up to 160 K and can be regulated by electrical means. This provides the possibility for future applications of SVHE at higher temperatures.

\[
\text{KR peaks become undetectable above 160 K}
\]

- **Electrical modulation**: Research shows that by applying gate voltage and drain voltage, SVHE can be effectively modulated. For example, at 45 K, by applying different gate voltages, changes in the KR signal can be observed, thus proving the effectiveness of electrical modulation.

\[
J_{\text{sv}} = e p_s l_d / \tau_{\text{sv}}
\]

- **Spin/valley lifetime**: Based on KR data and reflection spectrum analysis, the researchers estimated that the spin/valley lifetime is 4.1 ns below 90 K and 0.26 ns at 160 K. These results provide important information for understanding the relaxation mechanisms of spin and valley.

\[
\tau_{\text{sv}} \approx 4.1 \, \text{ns} \quad (\text{at 90 K})
\]
\[
\tau_{\text{sv}} \approx 0.26 \, \text{ns} \quad (\text{at 160 K})
\]

- **Spin/valley polarization density**: By converting the KR signal into spin/valley imbalance density, the researchers found that at 45 K, the spin/valley polarization density at the edge is approximately 6%. This provides a basis for further research on the transport characteristics of spin and valley.

\[
P = 109 \, \mu\text{m}^{-1} \quad (\text{at 45 K})
\]

In conclusion, this research provides important experimental and theoretical bases for understanding the Spin and Valley Hall Effect in two - dimensional transition - metal chalcogenides and shows the potential for achieving electrical regulation at relatively high temperatures.