Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Tunable Valley Pseudospin and Electron-Phonon Coupling in WSe 2 /1T-VSe 2 Heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

Valley phonons and exciton complexes in a monolayer semiconductor

Spin-Valley Depolarization in Van Der Waals Heterostructures

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Observation of Intervalley Quantum Interference in Epitaxial Monolayer Tungsten Diselenide.

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

The origin of the band-splitting and the spin polarization in bulk 2H-WSe2

Tunable valley polarization and high Curie temperature in two-dimensional GdF2/WSe2 van der Waals heterojunction

Electronic Properties of Twisted Sb/WTe2 Van Der Waals Heterostructure with Controllable Band Gap, Band Alignment, and Spin Splitting

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Tailoring Coercive Fields and the Curie Temperature Via Proximity Coupling in WSe2/Fe3GeTe2 Van Der Waals Heterostructures

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures