Abstract:As a recent member of the two-dimensional (2D) van der Waals (vdW) heterostructures, the WSe2/CrSe2 heterostructure has received considerable attention due to its fascinating characteristics compared with the constituent 2D materials. In this paper, we performed first-principles calculations to investigate its structural, electronic, and magnetic properties and explored the effects of interlayer and in-plane strains on these properties. Our results reveal that the antiferromagnetic (AFM) ground state in the CrSe2 layer of the heterostructure is maintained owing to weak vdW interactions between the CrSe2 and WSe2 layers. However, the AFM state can be transformed into the ferromagnetic state at interlayer compressive strain of -19% or in-plane tensile strain of 2.5%. Moreover, the WSe2/CrSe2 heterointerface belongs to the metal-semiconductor interface and exhibits p-type ohmic contact and low contact resistance. The transition from p-type ohmic contact to p-type Schottky contact or n-type Schottky contact can be achieved by interlayer or in-plane strain engineering, which is associated with the strain-induced energy shifts of the valence band maximum and conduction band minimum of WSe2. Additionally, the tunneling probability of the heterostructure rises dramatically (up to 100%) with interlayer coupling, which is favorable for carrier transport at the heterointerface. Our findings demonstrate that strain engineering is an effective way of modulating metal-semiconductor interfaces and provide theoretical guidance for designing electronic and magnetic devices based on the WSe2/CrSe2 vdW heterostructure as well as broadening its applications in future functional devices.

Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures

Valley Splitting in the Van Der Waals Heterostructure WSe2/CrI3 : the Role of Atom Superposition

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Effect of strain engineering on magnetism-induced valley splitting in WSe 2 based on the WSe 2 /CrSe 2 heterojunction

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Enhanced Valley Splitting in Monolayer WSe2 Due to Magnetic Exchange Field

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Probing Magnetic-Proximity-effect Enlarged Valley Splitting in Monolayer WSe 2 by Photoluminescence

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Interface depended electronic and magnetic properties of vertical CrI3/WSe2 heterostructures

The origin of the band-splitting and the spin polarization in bulk 2H-WSe2

Tunable Valley Pseudospin and Electron-Phonon Coupling in WSe 2 /1T-VSe 2 Heterostructures

Tunable valley polarization and high Curie temperature in two-dimensional GdF2/WSe2 van der Waals heterojunction

Electronic Properties of Twisted Sb/WTe2 Van Der Waals Heterostructure with Controllable Band Gap, Band Alignment, and Spin Splitting

Modulating the Electronic Structure and Interface Contact of WSe2/CrSe2 Van Der Waals Heterostructures by Strain Engineering: Insights from First-Principles Calculations

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Inversion Symmetry Breaking Induced Valley Hall Effect in Multilayer WSe2.