Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Tunable valley polarization and high Curie temperature in two-dimensional GdF2/WSe2 van der Waals heterojunction

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Two-dimensional GdI 2 /GeC van der Waals heterostructure: Bipolar magnetic semiconductor, high critical temperature and large magnetic anisotropy

Two-dimensional intrinsic ferrovalley Gd I 2 with large valley polarization

Prediction of large spin-valley polarization in the Janus 2H–WSSe monolayer on VN magnetic substrate

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Two-dimensional Intrinsic Ferrovalley GdI2 with Large Valley Polarization

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Tunable Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction in an Ultrathin van der Waals Fe3GeTe2/In2Se3 Heterostructure

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures

The Electronic and Magnetic Properties Modulated by Ferroelectric Polarization Switching in Two-Dimensional VSeTe/Sc2CO2 Van Der Waals Heterostructures.

Room-Temperature and Tunable Tunneling Magnetoresistance in Fe<sub>3</sub>GaTe<sub>2</sub>-Based 2D van der Waals Heterojunctions

Tailoring Coercive Fields and the Curie Temperature Via Proximity Coupling in WSe2/Fe3GeTe2 Van Der Waals Heterostructures