Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Concepts of ferrovalley material and anomalous valley Hall effect

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer

Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials

Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer

Layer-locked Anomalous Valley Hall Effect in a Two-Dimensional A-type Tetragonal Antiferromagnetic Insulator

Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN 2 /MnPSe 3 Heterostructure

Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Anomalous valley Hall effect in antiferromagnetic monolayers

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Atypical breathing driven two-dimensional valley multiferroicity

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2