Abstract:Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and anomalous valley Hall effect (AVHE) in AFM materials is of great significance for potential applications in spintronics and valleytronics. Here, we predict an A-type AFM monolayer $\mathrm{Fe_2CF_2}$ with large spontaneous valley polarization. Monolayer $\mathrm{Fe_2CF_2}$ has zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space, which provides the basic conditions for the realization of AVHE. Because $\mathrm{Fe_2CF_2}$ possesses the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$) symmetry, the spin is degenerate, which prevents the AVHE. An out-of-plane external electric field can be used to produce spin splitting due to the introduction of layer-dependent electrostatic potential, and then layer-locked AVHE can be realized in $\mathrm{Fe_2CF_2}$. Moreover, the spin order of spin splitting can be reversed, when the direction of electric field is reversed. It is proved that the AVHE can be achieved in Janus $\mathrm{Fe_2CFCl}$ without external electric field due to intrinsic built-in electric field. Our works provide an AFM monolayer with excellent properties to realize AVHE.

Layer-locked Anomalous Valley Hall Effect in a Two-Dimensional A-type Tetragonal Antiferromagnetic Insulator

Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer

Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer $\mathrm{Fe_2CF_2}$

Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Anomalous valley Hall effect in antiferromagnetic monolayers

PT Symmetry Breaking Induced Anomalous Valley Hall Effect in 2D Antiferromagnetic Semiconductor

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Strain-engineering spin-valley locking effect in altermagnetic monolayer with multipiezo properties

In-Plane Anomalous Hall Effect in -Symmetric Antiferromagnetic Materials

Quantum anomalous hall effect in collinear antiferromagnetism

Antiferromagnetic Quantum Spin Hall Insulators with High Spin Chern Numbers

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Quantum layer spin Hall effect in sliding antiferromagnetic bilayers

Electronic correlation-driven quantum anomalous valley Hall effect in intrinsic ferrovalley FeClBr

Ferroelectric Antiferromagnetic Quantum Anomalous Hall Insulator in Two-Dimensional Van Der Waals Materials

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers