Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4
Kang Jia,Xiao-Jing Dong,Sheng-Shi Li,Wei-Xiao Ji,Chang-Wen Zhang,Shengshi Li,Weixiao Ji,Chang-wen Zhang
DOI: https://doi.org/10.1039/d3nr05643k
IF: 6.7
2024-03-29
Nanoscale
Abstract:It is both conceptually and practically fascinating to explore fundamental researches and practical applications in two-dimensional systems with the tunable abundant valley Hall effect. In this work, based on the first-principles calculations, the tunable abundant valley Hall effect is proved to appear in the Janus monolayer VCGeN4. When the magnetization is along out-of-plane, the VCGeN4 is an intrinsic ferromagnetic semiconductor with valley feature. The intriguing spontaneous valley polarization exists in the VCGeN4 due to the common influence of broken inversion and time-reversal symmetries, which makes it easier to realize the anomalous valley Hall effect. Furthermore, we observe that the valley-nonequilibrium quantum anomalous Hall effect is driven under external strain, which is located between two half-valley-metal states. When reversing the magnetization, the spin flipping makes the position of edge state to change from one valley to another valley, demonstrating an intriguing behavior known as chiral spin-valley locking. Although the easy magnetic axis orientation is along in-plane, we can utilize an external magnetic field to transform the magnetic axis orientation. Moreover, it is found that the valley state, electronic, and magnetic properties can be well regulated by the electric field. Our works explore the mechanism of tunable abundant valley Hall effect by applying external strain and electric field, which provides a perfect platform to investigate the spin, valley, and topology.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry