Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Electrically Tunable Valleytronics in Quantum Anomalous Hall Insulating Transition Metal Trihalides

Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Multifield tunable valley splitting in two-dimensional MXene Cr$_2$COOH

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Valley-Splitting and Valley-Dependent Inter-Landau-Level Optical Transitions in Monolayer Mos2 Quantum Hall Systems

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Valleytronics in transition metal dichalcogenides materials

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Quantum anomalous Hall effect and half-metal state of valley in VGe 2 N 4 monolayer

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Magnetically and electrically controllable valley splittings in MXene monolayers

Valley-dependent topological phase transition and quantum anomalous valley Hall effect in single-layer RuClBr

Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors