Abstract:Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a good platform to study their effects. Recently, a new class of 2D transition metal compounds, the MoSi2N4-family materials, has been discovered, and some of them exhibit intrinsic magnetism. Here, taking monolayer VSi2P4 as an example from the family, we investigate the impact of correlation effects on its physical properties, based on the first-principles calculations with the DFT+U approach. We find that different correlation strengths can drive the system into a variety of interesting ground states, with rich magnetic, topological, and valley features. With increasing correlation strength, while the system favors a ferromagnetic semiconductor state for most cases, the magnetic anisotropy and the band gap type undergo multiple transitions, and in the process, the band edges can form single, two, or three valleys for electrons or holes. Remarkably, there is a quantum anomalous Hall (QAH) insulator phase, which has a unit Chern number and has its chiral edge states polarized in one of the valleys. The boundary of the QAH phase corresponds to the half-valley semimetal state with fully valley polarized bulk carriers. We further show that for phases with the out-of-plane magnetic anisotropy, the interplay between spin-orbit coupling and orbital character of valleys enables an intrinsic valley polarization for electrons but not for holes. This electron valley polarization can be switched by reversing the magnetization direction, providing a new route of magnetic control of valleytronics. Our result sheds light on the possible role of correlation effects in the 2D transition metal compounds, and it will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

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Correlation-driven topological and valley states in monolayer VSi 2 P 4