Abstract:Various physical phenomena have been discovered by tuning degrees of freedom, among which there is the "valley" degree of freedom (DOF). The typical valley materials are characterized by two degenerate valley states protected by time-reversal symmetry (TS). These states indexed by valley DOF have been measured and manipulated for emergent valley-contrasting physics with the broken valley degeneracy. To achieve the valley splitting resulting from TS breaking, previous studies have mainly focused on the magnetic proximity effect provided by the ferromagnetic layer. In contrast, the antiferromagnetic (AFM) proximity effect on the valley degeneracy has not been widely investigated systematically. In this work, we construct the composite systems consisting of a transition-metal dichalcogenide monolayer and a proximity layer with specific intraplane AFM configurations. We extend the three-band model to describe the valley states of such systems. It is shown that either "time-reversal + fractional translation" or "mirror" symmetry can protect the valley degeneracy. Additionally, first-principles calculations based on density functional theory (DFT) have been performed to verify the results obtained from the extended tight-binding (TB) model. The corresponding mechanism of the valley splitting/degeneracy is revealed through the nondegenerate perturbation. Meanwhile, an extra condition is proposed to keep the well-defined valley states disentangled from each other through two negative examples based on degenerate perturbation. Further DFT studies on the effects of the Ueff and interlayer distance are performed. Manipulating the magnetization of Mo is shown to be feasible and effective for controlling the valley splitting with the direct overlap tuned by Ueff and the interlayer distance. The TB method introduced in the present work can properly describe the low-energy physics of valley materials that couple to the proximity with complex magnetic configurations. The results considerably expand the range of qualified proximity layers for valley splitting, enabling more flexible manipulation of valley degree.

Tunable valley splitting in RuClF bilayer

Spontaneous and tunable valley polarization in two-dimensional single-layer LaCl2

Valley-dependent topological phase transition and quantum anomalous valley Hall effect in single-layer RuClBr

Electrically Tunable Valleytronics in Quantum Anomalous Hall Insulating Transition Metal Trihalides

First-Principles Study Reveals an Electronic Correlation Effect on the Topological and Electronic Properties of Janus RuClF Monolayers: Implications for Spintronics and Valleytronics Applications

Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Multifield tunable valley splitting in two-dimensional MXene Cr$_2$COOH

Magnetically and electrically controllable valley splittings in MXene monolayers

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Valley Manipulation by Sliding-Induced Tuning of the Magnetic Proximity Effect in Heterostructures.

Multifield Tunable Valley Splitting in Two-Dimensional MXene Cr_2COOH

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Tunable valley polarization in two-dimensional H-HfI 2 /T-VBrCl van der Waals heterostructure

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Ferroelectric Control of Layer-Polarized Anomalous Hall Effects in Bilayer and Trilayer RuCl 2

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Tunable Valley Polarization in Two-Dimensional H-HfI2/T-VBrCl Van Der Waals Heterostructure

Symmetry-dependent Antiferromagnetic Proximity Effects on Valley Splitting

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Tunable valley-selective circular polarization in vdW multilayers consisting of inversion-symmetric monolayers