Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Valleytronics in two-dimensional magnetic materials

Electrically Tunable Valleytronics in Quantum Anomalous Hall Insulating Transition Metal Trihalides

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Concepts of ferrovalley material and anomalous valley Hall effect

Valley-dependent Properties in Two-Dimensional Cr2COF MXene Predicted from First Principles

Tunable Valley Polarization in Two-Dimensional H-HfI2/T-VBrCl Van Der Waals Heterostructure

Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Valley-related multiple Hall effect in monolayer V Si 2 P 4

Tunable valley polarization in two-dimensional H-HfI 2 /T-VBrCl van der Waals heterostructure

Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials

Prediction of Intriguing Valley Properties in Two-Dimensional Hf2TeIX (X = I, Br) Monolayers

Intrinsic Valley-Related Multiple Hall Effect in 2D Organometallic Lattice

Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect

Intrinsic anomalous valley Hall effect in single-layer N b 3 I 8

Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials