Abstract:This paper proposes a novel mechanism that realizes strong coupling between strain and valley physics in a 2D antiferromagnetic honeycomb lattice in a controllable fashion, through the mediation of inversion and time‐reversal symmetries. Based on first‐principles calculations, the validity of this mechanism is further demonstrated in a series of real materials. In recent years, 2D valley physics has attracted tremendous attention in both fundamental research and device applications. The search for a coupling valley with exotic physical properties can enable the exploration of novel quantum devices and is therefore of significant interest. Here, using model analysis, a novel mechanism is proposed that realizes strong coupling between strain and valley physics in a 2D antiferromagnetic honeycomb lattice in a controllable fashion. This idea is to modulate the exchange interactions through strain, thereby mediating the inversion and time‐reversal symmetries. As valley physics are connected with the symmetries, this enables a strong strain‐valley coupling. On the basis of first‐principles calculations, the validity of this mechanism is further demonstrated in a series of single‐layer systems, i.e., AuCl3, CrI3, and VPTe3, which are predicted to host valley polarization and anomalous valley Hall effect. The change in bonding angle is found to play a crucial role in mediating the exchange interaction and thus the strain‐valley coupling process. The microscopic origin is also discussed. These explored phenomena and insights greatly enrich the valley physics and 2D materials research.

Intrinsic Valley-Related Multiple Hall Effect in 2D Organometallic Lattice

Valley-related multiple Hall effect in monolayer V Si 2 P 4

Intrinsic anomalous valley Hall effect in single-layer N b 3 I 8

Spontaneous valley polarization in two-dimensional organometallic lattices

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Valley-related multiple Hall effect in single-layer VSi2P4

Single-layer ScI 2 : A paradigm for valley-related multiple Hall effect

Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect

Valley-dependent Properties in Two-Dimensional Cr2COF MXene Predicted from First Principles

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Valley-dependent properties in two-dimensional Cr 2 COF MXene predicted from first principles

Strain and U driven phase transitions in monolayer intrinsic ferrovalleyNbIn2As2Se2

Giant spin-valley polarization and multiple Hall effect in functionalized bismuth monolayers

Strain and U driven phase transitions in monolayer intrinsic ferrovalley NbIn2As2Se2

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Layer-valley Hall effect under inversion and time-reversal symmetries

Strain‐Valley Coupling in 2D Antiferromagnetic Lattice

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers