Abstract:Highlights • TiBrTe monolayers can spontaneously generate valley polarization, which can be adjusted or flipped by manipulating the magnetization orientation of the magnetic atoms. • The valley polarization will increase with U, and the valley polarization exchange between the conduction band and the valance band at 3.595∼3.650 eV, due to inversions between the valence band dx2−y2/dxy orbitals and conduction band dz2 orbitals. • Through U modulation, the TiBrTe monolayer produces topological phase transitions at 3.595 eV and 3.650 eV due to the orbitals inversion and Berry curvature sign reverse. Valley-polarized quantum anomalous Hall effect is significant for quantum information processing based on the valley degree of freedom, but its implementation in two-dimensional materials is currently challenging. Through first-principle calculations, we investigate the electronic structure, magnetic and topological properties of the TiBrTe monolayer. TiBrTe monolayer is an intrinsic ferrovalley semiconductor with an in-plane easy axis of magnetization and a high Curie temperature of 569 K. The valley polarization in the TiBrTe monolayer can be adjusted or flipped by manipulating the magnetization orientation of the magnetic atoms. The electronic correlation effect can be used to manipulate the different energy gaps of K and -K valleys. A topological phase transition occurs with increasing electronic correlation effect, and valley-polarized quantum anomalous Hall effect can be induced, which originates from the sign-reversible Berry curvature and band inversion between dx2−y2 / dxy and dz2 orbitals. These results provide an avenue for the applications of valleytronic quantum devices. Graphical abstract Download : Download high-res image (180KB) Download : Download full-size image

Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Large valley polarization and valley-dependent Hall effect in Janus TiTeBr monolayer

Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer

First-principles study of the valley-polarized quantum anomalous Hall effect in TiBrTe monolayers

Valley polarization in a two-dimensional high-temperature semiconducting TiInTe 3 honeycomb ferromagnet

Combined Piezoelectricity and Ferrovalley Properties in Janus Monolayer VClBr

Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Prediction of the two-dimensional Janus ferrovalley material LaBrI

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Two-dimensional Intrinsic Ferrovalley GdI2 with Large Valley Polarization

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

First-Principles Study on Valley Polarization of Ferromagnetic PrBr2 Monolayer under Strain

Two-dimensional intrinsic ferrovalley Gd I 2 with large valley polarization

Concepts of ferrovalley material and anomalous valley Hall effect

Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Valley-dependent Topological Phase Transition in Monolayer Ferrovalley Materials RuXY (X, Y = F, Cl, Br)