Abstract:Highlights • TiBrTe monolayers can spontaneously generate valley polarization, which can be adjusted or flipped by manipulating the magnetization orientation of the magnetic atoms. • The valley polarization will increase with U, and the valley polarization exchange between the conduction band and the valance band at 3.595∼3.650 eV, due to inversions between the valence band dx2−y2/dxy orbitals and conduction band dz2 orbitals. • Through U modulation, the TiBrTe monolayer produces topological phase transitions at 3.595 eV and 3.650 eV due to the orbitals inversion and Berry curvature sign reverse. Valley-polarized quantum anomalous Hall effect is significant for quantum information processing based on the valley degree of freedom, but its implementation in two-dimensional materials is currently challenging. Through first-principle calculations, we investigate the electronic structure, magnetic and topological properties of the TiBrTe monolayer. TiBrTe monolayer is an intrinsic ferrovalley semiconductor with an in-plane easy axis of magnetization and a high Curie temperature of 569 K. The valley polarization in the TiBrTe monolayer can be adjusted or flipped by manipulating the magnetization orientation of the magnetic atoms. The electronic correlation effect can be used to manipulate the different energy gaps of K and -K valleys. A topological phase transition occurs with increasing electronic correlation effect, and valley-polarized quantum anomalous Hall effect can be induced, which originates from the sign-reversible Berry curvature and band inversion between dx2−y2 / dxy and dz2 orbitals. These results provide an avenue for the applications of valleytronic quantum devices. Graphical abstract Download : Download high-res image (180KB) Download : Download full-size image

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