Abstract:Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of antiferromagnets. However, the physics of spontaneous valley polarization is mainly rooted in FM hexagonal lattices and is rarely used to explore the simultaneous spin and valley polarizations in AFM materials. Here, we propose a general stacking way to achieve valley polarization in AFM bilayer systems. The hexagonal ferrovalley material is used as the basic building unit, and then the space-inversion centrosymmetric bilayer system with interlayer AFM ordering is constructed by horizontal mirror and 2-fold rotational operations, which can exhibit spontaneous valley polarization. In this construction process, the rarely explored \textit{layer-locked hidden valley polarization}, hidden Berry curvature and layer Hall effect are involved, and an out-of-plane electric field can be used to detect hidden valley polarization and to realize layer-locked anomalous valley Hall effect. We use three examples to illustrate our proposal. Firstly, the Janus GdBrI is used to prove concepts and effects involved in our design process. Secondly, the $\mathrm{RuBr_2}$ is used to demonstrate other phenomena, including valley polarization transition and \textit{near-ideal quantum spin Hall insulator}. Finally, we use our design principles to understand the valley polarization of experimentally synthesized MnSe from a new perspective. Our works establish a robust general scheme to achieve valley polarization in AFM bilayer systems, thereby opening up new avenues for AFM valleytronics.

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Enhanced Valley Polarization in WS2/LaMnO3 Heterostructure

Spontaneous valley polarization in two-dimensional organometallic lattices

Electrically Tunable Valleytronics in Quantum Anomalous Hall Insulating Transition Metal Trihalides

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi 2 N 4 /MnPS 3 Heterostructure

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Valley polarization in 2D tetragonal altermagnetism

Concepts of ferrovalley material and anomalous valley Hall effect

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Proposal of a general scheme: valley polarization in antiferromagnetic bilayer systems

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure