Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Valley-Polarized Topological Phases with In-Plane Magnetization

Recent Progress on Valley Polarization and Valley-Polarized Topological States in Two-Dimensional Materials

Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Valley-dependent Topological Phase Transition in Monolayer Ferrovalley Materials RuXY (X, Y = F, Cl, Br)

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Controllable Valley Polarization Using Graphene Multiple Topological Line Defects

Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Valley polarization in 2D tetragonal altermagnetism

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Correlation-driven topological and valley states in monolayer VSi 2 P 4

Giant Valley Splitting And Valley Polarized Plasmonics In Group V Transition-Metal Dichalcogenide Monolayers

Valley-Polarized Quantum Anomalous Hall Phases and Tunable Topological Phase Transitions in Half-Hydrogenated Bi Honeycomb Monolayers

Valleytronics in two-dimensional magnetic materials

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Valley polarization in twisted altermagnetism

Valley-contrasting Physics in Graphene: Magnetic Moment and Topological Transport.

Dual-polarization Two-Dimensional Valley Photonic Crystals

Floquet engineering of the orbital Hall effect and valleytronics in two-dimensional topological magnets