Abstract:In this paper, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6, a novel spin‐valley functional device that exhibits both electrical and magnetic tunability is demonstrated. This provides a new physical knob that may effectively manipulate the spin‐valley polarization in the device context. The emergence of atomically thin valleytronic semiconductors and 2D ferromagnetic materials is opening up new technological avenues for future information storage and processing. A key fundamental challenge is to identify physical knobs that may effectively manipulate the spin‐valley polarization, preferably in the device context. Here, a novel spin functional device that exhibits both electrical and magnetic tunability is fabricated, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6. Remarkably, the valley‐polarization of MoSe2 is found to be controlled by a back‐gate voltage with an appreciably enlarged valley splitting rate. At fixed gate voltages, the valley‐polarization exhibits magnetic‐field and temperature dependence that corroborates well with the intrinsic magnetic properties of Cr2Ge2Te6, pointing to the impact of magnetic exchange interactions. Due to the interfacial arrangement, the charge‐carrying trion photoemission predominates in the devices, which may be exploited to enable drift‐based spin‐optoelectronic devices. These results provide new insights into valley‐polarization manipulation in transition metal dichalcogenides by means of ferromagnetic semiconductor proximitizing and represent an important step forward in devising field‐controlled 2D magneto‐optoelectronic devices.

Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Giant Valley Splitting And Valley Polarized Plasmonics In Group V Transition-Metal Dichalcogenide Monolayers

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

Valley Manipulation by Sliding-Induced Tuning of the Magnetic Proximity Effect in Heterostructures.

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Magnetically and electrically controllable valley splittings in MXene monolayers

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Valley-Polarized Topological Phases with In-Plane Magnetization

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Giant and tunable valley degeneracy splitting in MoTe2

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures