Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

Valley-polarized Quantum Anomalous Hall Phase and Disorder-Induced Valley-Filtered Chiral Edge Channels

Electrically Tunable Valleytronics in Quantum Anomalous Hall Insulating Transition Metal Trihalides

Floquet valley-polarized quantum anomalous Hall state in nonmagnetic heterobilayers

Valley-Polarized Topological Phases with In-Plane Magnetization

Magnetic Field Induced Valley-Polarized Quantum Anomalous Hall Effects in Ferromagnetic Van Der Waals Heterostructures

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Valley-Polarized Quantum Anomalous Hall Phases and Tunable Topological Phase Transitions in Half-Hydrogenated Bi Honeycomb Monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Topological phase transition on the ruby lattice with Rashba spin–orbit coupling and an exchange field

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures

Valley-dependent Topological Phase Transition in Monolayer Ferrovalley Materials RuXY (X, Y = F, Cl, Br)

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Tunable Chiral and Helical Edge State Transport in a Magnetic Topological Insulator Bilayer

Valley-polarized Quantum Anomalous Hall Effect in Silicene.

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Quantum Valley Hall Effects and Spin-Valley Locking in Topological Kane-Mele Circuit Networks

Interacting multi-channel topological boundary modes in a quantum Hall valley system