Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials

Concepts of ferrovalley material and anomalous valley Hall effect

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Valleytronic Properties and Devices Based on Two-Dimensional Atomic Layer Materials

Valleytronics in two-dimensional magnetic materials

Progress on two-dimensional ferrovalley materials

Valley manipulation by external fields in two-dimensional materials and their hybrid systems

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Atypical breathing driven two-dimensional valley multiferroicity

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Tunneling valley Hall effect driven by tilted Dirac fermions

Spontaneous valley polarization in two-dimensional organometallic lattices

Intrinsic anomalous valley Hall effect in single-layer N b 3 I 8

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Valleytronics in transition metal dichalcogenides materials