Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Valley-Polarized Quantum Anomalous Hall Effect in Ferrimagnetic Honeycomb Lattices

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers

Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number

Prediction of coexistence of anomalous valley Hall and quantum anomalous Hall effects in breathing kagome-honeycomb lattices

Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials

Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures

Coupling the valley degree of freedom to antiferromagnetic order

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Topological monopole's gauge field induced anomalous Hall effect in artificial honeycomb lattice

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Unification of Valley and Anomalous Hall Effects in a Strained Lattice

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Valley-contrasting physics in a two-dimensional p x , y -orbital honeycomb lattice

Single-layer ScI 2 : A paradigm for valley-related multiple Hall effect

Layer-locked Anomalous Valley Hall Effect in a Two-Dimensional A-type Tetragonal Antiferromagnetic Insulator

Possible Way to Achieve Anomalous Valley Hall Effect by Tunable Intrinsic Piezoelectric Polarization in FeO_2SiGeN_2 Monolayer