Abstract:Abstract Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III broken-gap heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first-principles calculations, and the symmetry-based analytical models, we identify eight type-III broken-gap heterojunctions consisting of 2D ferromagnetic insulators in the MXY compound family as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.

PT Symmetry Breaking Induced Anomalous Valley Hall Effect in 2D Antiferromagnetic Semiconductor

Anomalous valley Hall effect in antiferromagnetic monolayers

Giant Anomalous Hall Effect in a Ferromagnetic Kagome-lattice Semimetal

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN 2 /MnPSe 3 Heterostructure

Layer-locked Anomalous Valley Hall Effect in a Two-Dimensional A-type Tetragonal Antiferromagnetic Insulator

Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer

Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials

In-Plane Anomalous Hall Effect in -Symmetric Antiferromagnetic Materials

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer

Ferroelectric Antiferromagnetic Quantum Anomalous Hall Insulator in Two-Dimensional Van Der Waals Materials

Atypical breathing driven two-dimensional valley multiferroicity

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Strain-tunable quantum anomalous Hall effect/quantum anomalous valley Hall effect in two-dimensional ferromagnetic non-Dirac topological half-metal N2Pd4S6

Switchable anomalous Hall effects in polar-stacked 2D antiferromagnet MnBi2Te4

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer