Valley-filling instability and critical magnetic field for interaction-enhanced Zeeman response in doped WSe2 monolayers

Fengyuan Xuan,Su Ying Quek
DOI: https://doi.org/10.1038/s41524-021-00665-8
IF: 12.256
2021-12-01
npj Computational Materials
Abstract:Abstract Carrier-doped transition metal dichalcogenide (TMD) monolayers are of great interest in valleytronics due to the large Zeeman response (g-factors) in these spin-valley-locked materials, arising from many-body interactions. We develop an ab initio approach based on many-body perturbation theory to compute the interaction-enhanced g-factors in carrier-doped materials. We show that the g-factors of doped WSe 2 monolayers are enhanced by screened-exchange interactions resulting from magnetic-field-induced changes in band occupancies. Our interaction-enhanced g-factors g * agree well with experiment. Unlike traditional valleytronic materials such as silicon, the enhancement in g-factor vanishes beyond a critical magnetic field B c achievable in standard laboratories. We identify ranges of g * for which this change in g-factor at B c leads to a valley-filling instability and Landau level alignment, which is important for the study of quantum phase transitions in doped TMDs. We further demonstrate how to tune the g-factors and optimize the valley-polarization for the valley Hall effect.
materials science, multidisciplinary,chemistry, physical
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