Abstract:The structural, electronic, and magnetic properties of vanadium disulfide VS 2 monolayers were investigated using first-principles calculations and Monte Carlo (MC) simulations. The results of molecular dynamics simulations and phonon dispersion showed that the VS 2 monolayer has good dynamic and thermodynamic stabilities. Based on the results of the band structure, we also explore the effect of carrier concentrations on the spin gap, spin polarization and the direction of the easy magnetic axis. Our results demonstrated that doping an appropriate amount of holes can cause the reversal of the easy magnetic axis and maintain nearly 100% spin polarization, which greatly improves the application possibility of the VS 2 monolayer as a spintronic device. The contribution of different orbits to the spin–orbit coupling (SOC) effect is given in magnetocrystalline anisotropy energy, which provides a theoretical basis for explaining the origin of magnetic crystal anisotropy. Based on the MC simulations, we also showed the influences of different parameters (carrier concentrations, magnetic field and crystal field) on the magnetothermal properties of the VS 2 monolayer. It is found that the increase of hole doping concentrations can promote the increase of the Curie temperature, while the increase of electron doping concentrations will greatly weaken the Curie temperature. Furthermore, according to the influences of different parameters on the Curie temperature and spin polarization, we conclude that a suitably enhanced magnetic field and appropriate hole concentrations will not only make the system maintain high spin polarization, but also make the system exhibit ferromagnetic properties above room temperature.

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Electronic Properties and Magnetism of VN/Ga2O2/VN Spin Valves

Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Significant Enhancement of Magnetic Anisotropy and Conductivity in GaN/CrI3 Van Der Waals Heterostructures Via Electrostatic Doping

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Study on the Effects of Strain and Electrostatic Doping on the Magnetic Anisotropy of GaN/VTe2 Van Der Waals Heterostructure

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2van der waals heterostructure

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe 2 van der Waals heterostructure

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Spin Valve Effect in CrN/GaN Van Der Waals Heterostructures

Tunable valley polarization and high Curie temperature in two-dimensional GdF2/WSe2 van der Waals heterojunction

Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Two-dimensional GdI 2 /GeC van der Waals heterostructure: Bipolar magnetic semiconductor, high critical temperature and large magnetic anisotropy

Tunable Electronic Structure and Magnetic Characteristics of Two-Dimensional Graphyne/vi3 Van Der Waals Heterostructures

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Enhanced Ferromagnetism and Tunable Magnetic Anisotropy in a van der Waals Ferromagnet

Ferromagnetic vanadium disulfide VS 2 monolayers with high Curie temperature and high spin polarization

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces

Strong In-Plane Magnetization and Spin Polarization in (Co 0.15 Fe 0.85 ) 5 GeTe 2 /Graphene van der Waals Heterostructure Spin-Valve at Room Temperature