Abstract:van der Waals magnetic heterostructures, consisting of a wide band-gap nitride semiconductor and an intrinsic ferromagnetic semiconductor, are potentially useful for low-dimensional spintronic field-effect transistors. However, there is a significant challenge. For instance, the integration often leads to a decreased Curie temperature, the magnetic anisotropy direction change, and low conductivities. Here, we employ the first-principles density-functional method to systematically investigate the electronic and magnetic properties of the $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructures under electrostatic doping. Though the easy magnetization axis of the monolayer ${\mathrm{CrI}}_{3}$ transforms from out-of-plane to in-plane direction over 0.2 electron doping per unit cell, the $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructure maintains perpendicular anisotropy under electron doping, crucial for high-density information storage. The Curie temperature of the $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructure can be enhanced under both electron and hole doping. The $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructure presents half-metallic properties and the spin-up conductivities are much larger than that of the monolayer ${\mathrm{CrI}}_{3}$ under the same electrostatic doping. Our results indicate that constructing heterostructures with ferromagnets and nonmagnetic semiconductors is an effective strategy for developing high-performance field-effect transistors.

Study on the Effects of Strain and Electrostatic Doping on the Magnetic Anisotropy of GaN/VTe2 Van Der Waals Heterostructure

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2van der waals heterostructure

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe 2 van der Waals heterostructure

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Significant Enhancement of Magnetic Anisotropy and Conductivity in GaN/CrI3 Van Der Waals Heterostructures Via Electrostatic Doping

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure

Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Tunable Electronic Structure and Magnetic Characteristics of Two-Dimensional Graphyne/vi3 Van Der Waals Heterostructures

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study

Electric field and strain engineering tuning of 2D Gr/α-Ga2O3 van der Waals heterostructures

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Designing Magnetic Anisotropy Through Strain Doping

Strain and external electric field modulation of the electronic and optical properties of GaN/WSe2 vdWHs