Abstract:van der Waals magnetic heterostructures, consisting of a wide band-gap nitride semiconductor and an intrinsic ferromagnetic semiconductor, are potentially useful for low-dimensional spintronic field-effect transistors. However, there is a significant challenge. For instance, the integration often leads to a decreased Curie temperature, the magnetic anisotropy direction change, and low conductivities. Here, we employ the first-principles density-functional method to systematically investigate the electronic and magnetic properties of the $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructures under electrostatic doping. Though the easy magnetization axis of the monolayer ${\mathrm{CrI}}_{3}$ transforms from out-of-plane to in-plane direction over 0.2 electron doping per unit cell, the $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructure maintains perpendicular anisotropy under electron doping, crucial for high-density information storage. The Curie temperature of the $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructure can be enhanced under both electron and hole doping. The $\mathrm{GaN}/{\mathrm{CrI}}_{3}$ van der Waals heterostructure presents half-metallic properties and the spin-up conductivities are much larger than that of the monolayer ${\mathrm{CrI}}_{3}$ under the same electrostatic doping. Our results indicate that constructing heterostructures with ferromagnets and nonmagnetic semiconductors is an effective strategy for developing high-performance field-effect transistors.

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe 2 van der Waals heterostructure

Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2van der waals heterostructure

Study on the Effects of Strain and Electrostatic Doping on the Magnetic Anisotropy of GaN/VTe2 Van Der Waals Heterostructure

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Significant Enhancement of Magnetic Anisotropy and Conductivity in GaN/CrI3 Van Der Waals Heterostructures Via Electrostatic Doping

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure

Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study

Tunable Electronic Structure and Magnetic Characteristics of Two-Dimensional Graphyne/vi3 Van Der Waals Heterostructures

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Strain and external electric field modulation of the electronic and optical properties of GaN/WSe2 vdWHs

Electric field and strain engineering tuning of 2D Gr/α-Ga2O3 van der Waals heterostructures

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Designing Magnetic Anisotropy Through Strain Doping